Silicon vacancy in SiC: A high-spin state defect
نویسندگان
چکیده
All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user.
منابع مشابه
Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC.
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies (V(Si)) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 μs. Two opposite schemes of the optical alignment...
متن کاملAll-optical coherent population trapping with defect spin ensembles in silicon carbide
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, co...
متن کاملThe carbon vacancy related EI4 defect in 4H-SiC
Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting Si hyperfine (hf) lines and also other C and Si hf structures were observed. Based on the observed hf structures and ann...
متن کاملIdentification of the carbon antisite-vacancy pair in 4H-SiC.
The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacan...
متن کاملAb initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials
The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio method based on density-functional theory. The interstitial-vacancy recombination, the diffusion of vacancies, and interstitials to defect sinks ~e.g., surfaces or dislocations! as well as the formation of interstitial clusters are considered. The calculated migration and reaction barriers suggest a ...
متن کاملExcitation Properties of Silicon Vacancy in Silicon Carbide
Isolated point defects possessing a high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. The silicon vacancy in silicon carbide provides these features, making it a feasible candidate in this special and emerging field of science. However, the exact nature of the...
متن کامل